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PN Junction Semiconductor develops silicon carbide and gallium nitride power devices.
Founded in 2018 and based in Hangzhou, China, PN Junction Semiconductor researches and manufactures SiC and GaN power devices, including more than 100 models of SiC SBD, SiC MOSFET and GaN HEMT. Its products serve applications such as servers, electric vehicles, charging stations, data centers and energy storage. In February 2025, it raised CNY 500 million in Series A+ and A++ funding.
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